Method for detecting VMOS tubes
Method for detecting VMOS tubes

1. Determine gate G, 2. Determine source S and drain D, 3. Measure drain source on state resistance RDS (on), 4. Check transconductance

Categories:Product knowledge Date:2024-11-19 Hits:452 View »


Key issues in the process of making household single ended field-effect transistors
Key issues in the process of making household single ended field-effect transistors

1. Power supply circuit; 2. Amplification circuit debugging; 3. Machine tone tuning; 4. The heat dissipation of the machine and the fixation of the power pipe

Categories:Product knowledge Date:2024-11-19 Hits:469 View »


Main characteristic parameters of thyristor
Main characteristic parameters of thyristor

Repetitive peak voltage in both forward and reverse directions - rated voltage (VDRM, VRRM, whichever is smaller).

Categories:Product knowledge Date:2024-11-19 Hits:453 View »


Main parameters of thyristor
Main parameters of thyristor

The average rated on state current IT is the average value of a 50 Hz sine half wave current that can continuously pass between the anode and cathode under certain conditions.

Categories:Product knowledge Date:2024-11-19 Hits:408 View »


Method of using a multimeter to check silicon control switches
Method of using a multimeter to check silicon control switches

Set the multimeter to the R × 1k position and measure the forward and reverse resistance between A-GA, GA-GK, and GK - respectively.

Categories:Product knowledge Date:2024-11-19 Hits:394 View »


YFW佑风微  Switching Diode  MMBD7000   SOT-23  Product substitution  PMBD7000 SOT-23
YFW佑风微 Switching Diode MMBD7000 SOT-23 Product substitution PMBD7000 SOT-23

MMBD7000 SOT-23 YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics

Categories:Product Subsitution Date:2024-11-18 Hits:382 View »


Principles of Field Effect Transistor Application
Principles of Field Effect Transistor Application

The working principle of field-effect transistors can be summarized as follows: "The ID flowing through the channel between the drain and source is controlled by the reverse bias gate voltage formed by the pn junction between the gate and the channel.

Categories:Product knowledge Date:2024-11-16 Hits:396 View »


How to identify crystal diodes and their main parameter roles
How to identify crystal diodes and their main parameter roles

The main characteristic of a diode is its unidirectional conductivity, which means that under the action of forward voltage, the on resistance is very small; Under the action of reverse voltage, the on resistance is very large or infinite.

Categories:Product knowledge Date:2024-11-16 Hits:468 View »


Pin identification method for junction field-effect transistor
Pin identification method for junction field-effect transistor

Determine gate G: Set the multimeter to the R × 1k position, connect any negative electrode of the multimeter to one electrode, and sequentially touch the other two electrodes with the other probe to measure their resistance.

Categories:Product knowledge Date:2024-11-16 Hits:425 View »


The difference between active and passive components
The difference between active and passive components

Active and passive components

Categories:Product knowledge Date:2024-11-16 Hits:374 View »


Total 75 Pages 747 Records
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