Repetitive peak voltage in both forward and reverse directions - rated voltage (VDRM, VRRM, whichever is smaller).
Categories：Product knowledge Date：2024-11-19 Hits：438 View »
The average rated on state current IT is the average value of a 50 Hz sine half wave current that can continuously pass between the anode and cathode under certain conditions.
Categories：Product knowledge Date：2024-11-19 Hits：396 View »
Set the multimeter to the R × 1k position and measure the forward and reverse resistance between A-GA, GA-GK, and GK - respectively.
Categories：Product knowledge Date：2024-11-19 Hits：383 View »
MMBD7000 SOT-23 YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics
Categories：Product Subsitution Date：2024-11-18 Hits：357 View »
The working principle of field-effect transistors can be summarized as follows: "The ID flowing through the channel between the drain and source is controlled by the reverse bias gate voltage formed by the pn junction between the gate and the channel.
Categories：Product knowledge Date：2024-11-16 Hits：371 View »
The main characteristic of a diode is its unidirectional conductivity, which means that under the action of forward voltage, the on resistance is very small; Under the action of reverse voltage, the on resistance is very large or infinite.
Categories：Product knowledge Date：2024-11-16 Hits：446 View »
Determine gate G: Set the multimeter to the R × 1k position, connect any negative electrode of the multimeter to one electrode, and sequentially touch the other two electrodes with the other probe to measure their resistance.
Categories：Product knowledge Date：2024-11-16 Hits：406 View »
Active and passive components
Categories：Product knowledge Date：2024-11-16 Hits：354 View »
The main reason is that the semiconductor types of each pole are different. The E, B, and C poles of PNP transistors are P-type, N-type, and P-type semiconductors, respectively, while NPN transistors are exactly the opposite.
Categories：Product knowledge Date：2024-11-16 Hits：431 View »
The reasons and solutions for MOS transistor breakdown are as follows
Categories：Product knowledge Date：2024-11-16 Hits：369 View »
